Shot-noise characteristics of triple-barrier resonant-tunneling diodes

Giant suppression of shot noise as signature of coherent transport in double barrier resonant diodes

Shot noise suppression in double barrier resonant tunnelling diodes with a Fano factor well below the value of 0.5 is theoretically predicted. This giant suppression is found to be a signature of the coherent transport regime and can occur near zero temperature as a consequence of the Pauli principle or above about 77 K as a consequence of long range Coulomb interaction. These predictions are v...

Charge Distribution and Capacitance of Double Barrier Resonant Tunneling Diodes

Charge and potential profiles are self-consistently calculated in double-barrier heterostmctures to derive the capacitance of resonant tunnelling devices. We show that the dipole charge integrated over the accumulation or the depletion side of the device is the result of a complex arrangement of the mobile charge dragged and drifted when a bias is applied. Excellent agreement is found with capa...

THz resonant-tunneling diodes

Current fluctuations in double-barrier quantum well resonant tunneling diodes

The measurements of the spectral intensity of the current fluctuations in double-barrier quantum well resonant tunneling diodes as a function of temperature and bias current are reported. Two types of devices were studied: one with AlAs barriers and GaAs well and contact regions, and the other has Alo,,Gae,As barriers. The frequency range covered is 1 Hz-100 kHz and the temperature range is 78-...

Noise Margins of Threshold Logic Gates containing Resonant Tunneling Diodes

Threshold gates consisting of resonant tunneling diodes (RTDs) in conjunction with HBTs or CHFETs or MOSFETs can form extremely compact, ultrafast, digital logic alternatives, and may be used for digital signal processing applications in the near future. The resonant tunneling phenomenon causes these circuits to exhibit super-high-speed switching capabilities. Additionally, by virtue of being t...